Method for fabricating semiconductor device with porous decoupling features

ABSTRACT

The present application discloses a method for fabricating the semiconductor device with the porous decoupling features. The method includes providing a substrate; integrally forming a first conductive line and a bottom contact on the substrate; integrally forming a first conductive line spacer on a sidewall of the first conductive line and a bottom contact spacer on a sidewall of the bottom contact; and forming a porous insulating layer between the first conductive line spacer and the bottom contact spacer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of U.S. Non-Provisionalapplication Ser. No. 16/885,825 filed on May 28, 2020, which isincorporated herein by reference in its entirety.

TECHNICAL FIELD

The present disclosure relates to a semiconductor device and a methodfor fabricating the semiconductor device, and more particularly, to asemiconductor device with porous decoupling features and the method forfabricating the semiconductor device with the porous decouplingfeatures.

DISCUSSION OF THE BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cellular telephones, digital cameras, andother electronic equipment. The dimensions of semiconductor devices arecontinuously being scaled down to meet the increasing demand ofcomputing ability. However, a variety of issues arise during thescaling-down process, and such issues are continuously increasing.Therefore, challenges remain in achieving improved quality, yield,performance, and reliability and reduced complexity.

This Discussion of the Background section is provided for backgroundinformation only. The statements in this Discussion of the Backgroundare not an admission that the subject matter disclosed in this sectionconstitutes prior art to the present disclosure, and no part of thisDiscussion of the Background section may be used as an admission thatany part of this application, including this Discussion of theBackground section, constitutes prior art to the present disclosure.

SUMMARY

One aspect of the present disclosure provides a semiconductor device.The semiconductor device comprises: a substrate; a first conductive linepositioned on the substrate and extend along a first direction; a firstconductive line spacer positioned on a sidewall of the first conductiveline; a bottom contact positioned adjacent to the first conductive line;a bottom contact spacer positioned on a sidewall of the bottom contact;and a porous insulating layer positioned between the first conductiveline spacer and the bottom contact spacer; wherein a porosity of theporous insulating layer is between about 25% and about 100%.

In some embodiments, a distance between the first conductive line spacerand the bottom contact spacer is less than one-fourth of a line width ofthe first conductive line.

In some embodiments, a sum of a thickness of the first conductive linespacer and a thickness of the bottom contact spacer is equal to orgreater than one-half of a distance between the first conductive lineand the bottom contact.

In some embodiments, the semiconductor device further comprises twoimpurity regions respectively correspondingly positioned below the firstconductive line and the bottom contact, the two impurity regions areformed of silicon phosphide, phosphorus-doped silicon carbon, siliconcarbide, silicon germanium, silicon-germanium-tin alloy, orsilicon-germanium-boron alloy.

In some embodiments, the semiconductor device further comprises a wordline structure positioned between the two impurity regions.

In some embodiments, each of the two impurity regions comprises an upperportion positioned adjacent to the word line structure and a lowerportion positioned below the upper portion and the upper portion has atapering cross-sectional profile.

In some embodiments, the upper portion of each of the two impurityregions comprises a top surface substantially coplanar with a topsurface of the substrate and two tapering sidewalls connected to the topsurface and an angle between one of the two tapering sidewalls and thetop surface is between about 45 degree and about 60 degree.

In some embodiments, a thickness of the upper portion of each of the twoimpurity regions is equal to or less than one-fifth of a thickness ofeach of the two impurity regions.

In some embodiments, the word line structure comprises a word linedielectric layer contacting the lower portion of the impurity region, aword line electrode positioned on the word line dielectric layer, and aword line capping layer positioned on the word line electrode.

In some embodiments, the word line dielectric layer has a thicknessbetween about 10 angstroms and about 30 angstroms.

In some embodiments, the bottom contact comprises a bottom contactbarrier layer and a bottom contact conductive layer positioned on thebottom contact barrier layer, the bottom contact spacer is positioned ona sidewall of the bottom contact barrier layer and a sidewall of thebottom contact conductive layer.

In some embodiments, the bottom contact barrier layer is a stacked layercomprising a bottom layer formed of titanium and a top layer formed oftitanium nitride.

In some embodiments, the bottom contact conductive layer is a stackedlayer comprising a bottom layer formed of tungsten nitride and a toplayer formed of tungsten.

In some embodiments, the semiconductor device further comprises a secondconductive line positioned above the bottom contact and extend along asecond direction different from the first direction.

In some embodiments, the semiconductor device further comprises a topcontact positioned between the bottom contact and the second conductiveline.

In some embodiments, the top contact comprises a first conductive layerpositioned on the bottom contact, a second conductive layer positionedon the first conductive layer, and a third conductive layer positionedon the second conductive layer.

In some embodiments, the first conductive layer is formed of dopedpolysilicon, the second conductive layer is formed of metal silicide andhas a thickness between about 2 nm and about 20 nm, and the thirdconductive layer is formed of metal or metal nitride.

In some embodiments, the porous insulating layer is positioned on asidewall of the first conductive line spacer and a sidewall of thebottom contact spacer.

Another aspect of the present disclosure provides a method forfabricating a semiconductor device. The method comprising: providing asubstrate; integrally forming a first conductive line and a bottomcontact on the substrate; integrally forming a first conductive linespacer on a sidewall of the first conductive line and a bottom contactspacer on a sidewall of the bottom contact; and forming a porousinsulating layer between the first conductive line spacer and the bottomcontact spacer.

In some embodiments, the method further comprises a step of forming twoimpurity regions in the substrate and below the first conductive lineand the bottom contact, wherein the two impurity regions are formed ofsilicon phosphide, phosphorus-doped silicon carbon, silicon carbide,silicon germanium, silicon-germanium-tin alloy, orsilicon-germanium-boron alloy.

Due to the design of the semiconductor device of the present disclosure,the parasitic capacitance between conductive feature such as the firstconductive line and the two bottom contacts may be reduced by thealleviation feature like the plurality of air gaps or the porousinsulating layer. Therefore, the performance of the semiconductor devicemay be improved. In addition, the upper portions of the plurality ofimpurity regions having tapering cross-sectional profile may provide anextra process tolerance for formation of contact thereon. Hence, theyield of fabrication of the semiconductor device may be improved.

The foregoing has outlined rather broadly the features and technicaladvantages of the present disclosure in order that the detaileddescription of the disclosure that follows may be better understood.Additional features and advantages of the disclosure will be describedhereinafter, and form the subject of the claims of the disclosure. Itshould be appreciated by those skilled in the art that the conceptionand specific embodiment disclosed may be readily utilized as a basis formodifying or designing other structures or processes for carrying outthe same purposes of the present disclosure. It should also be realizedby those skilled in the art that such equivalent constructions do notdepart from the spirit and scope of the disclosure as set forth in theappended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates, in a flowchart diagram form, a method forfabricating a semiconductor device in accordance with one embodiment ofthe present disclosure;

FIG. 2 illustrates, in a schematic top-view diagram, an intermediatesemiconductor device in accordance with one embodiment of the presentdisclosure;

FIG. 3 is a schematic cross-sectional view diagram taken along a lineA-A′ in FIG. 1 illustrating part of a flow for fabricating thesemiconductor device in accordance with one embodiment of the presentdisclosure;

FIG. 4 illustrates, in a schematic top-view diagram, an intermediatesemiconductor device in accordance with one embodiment of the presentdisclosure;

FIGS. 5 to 14 are schematic cross-sectional view diagrams taken alongthe line A-A′ in FIG. 4 illustrating part of the flow for fabricatingthe semiconductor device in accordance with one embodiment of thepresent disclosure;

FIG. 15 illustrates, in a schematic top-view diagram, an intermediatesemiconductor device in accordance with one embodiment of the presentdisclosure;

FIGS. 16 to 20 are schematic cross-sectional view diagrams taken alongthe line A-A′ in FIG. 15 illustrating part of the flow for fabricatingthe semiconductor device in accordance with one embodiment of thepresent disclosure;

FIG. 21 illustrates, in a schematic top-view diagram, an intermediatesemiconductor device in accordance with one embodiment of the presentdisclosure;

FIGS. 22 to 24 are schematic cross-sectional view diagrams taken alongthe line A-A′ in FIG. 21 illustrating part of the flow for fabricatingthe semiconductor device in accordance with one embodiment of thepresent disclosure;

FIG. 25 illustrates, in a schematic top-view diagram, an intermediatesemiconductor device in accordance with one embodiment of the presentdisclosure;

FIG. 26 is schematic cross-sectional view diagram taken along the lineA-A′ in FIG. 25 illustrating part of the flow for fabricating thesemiconductor device in accordance with one embodiment of the presentdisclosure; and

FIGS. 27 to 40 illustrate, in schematic cross-sectional diagrams,intermediate semiconductor devices in accordance with other embodimentsof the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

It should be understood that when an element or layer is referred to asbeing “connected to” or “coupled to” another element or layer, it can bedirectly connected to or coupled to another element or layer, orintervening elements or layers may be present.

It should be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. Unless indicated otherwise, these terms areonly used to distinguish one element from another element. Thus, forexample, a first element, a first component or a first section discussedbelow could be termed a second element, a second component or a secondsection without departing from the teachings of the present disclosure.

Unless the context indicates otherwise, terms such as “same,” “equal,”“planar,” or “coplanar,” as used herein when referring to orientation,layout, location, shapes, sizes, amounts, or other measures do notnecessarily mean an exactly identical orientation, layout, location,shape, size, amount, or other measure, but are intended to encompassnearly identical orientation, layout, location, shapes, sizes, amounts,or other measures within acceptable variations that may occur, forexample, due to manufacturing processes. The term “substantially” may beused herein to reflect this meaning. For example, items described as“substantially the same,” “substantially equal,” or “substantiallyplanar,” may be exactly the same, equal, or planar, or may be the same,equal, or planar within acceptable variations that may occur, forexample, due to manufacturing processes.

In the present disclosure, a semiconductor device generally means adevice which can function by utilizing semiconductor characteristics,and an electro-optic device, a light-emitting display device, asemiconductor circuit, and an electronic device are all included in thecategory of the semiconductor device.

It should be noted that, in the description of the present disclosure,above (or up) corresponds to the direction of the arrow of the directionZ, and below (or down) corresponds to the opposite direction of thearrow of the direction Z.

It should be noted that the terms “forming,” “formed” and “form” maymean and include any method of creating, building, patterning,implanting, or depositing an element, a dopant or a material. Examplesof forming methods may include, but are not limited to, atomic layerdeposition, chemical vapor deposition, physical vapor deposition,sputtering, co-sputtering, spin coating, diffusing, depositing, growing,implantation, photolithography, dry etching and wet etching.

FIG. 1 illustrates, in a flowchart diagram form, a method 10 forfabricating a semiconductor device 100A in accordance with oneembodiment of the present disclosure. FIG. 2 illustrates, in a schematictop-view diagram, an intermediate semiconductor device in accordancewith one embodiment of the present disclosure. FIG. 3 is a schematiccross-sectional view diagram taken along a line A-A′ in FIG. 1illustrating part of a flow for fabricating the semiconductor device100A in accordance with one embodiment of the present disclosure.

With reference to FIGS. 1 to 3, at step S11, a substrate 101 may beprovided and an isolation layer 103 may be formed in the substrate 101.

The substrate 101 may be formed of, for example, silicon, germanium,silicon germanium, silicon carbon, silicon germanium carbon, gallium,gallium arsenide, indium arsenide, indium phosphorus or other IV-IV,III-V or II-VI semiconductor materials. The substrate 101 may have afirst lattice constant. In some embodiments, the substrate 101 mayinclude an organic semiconductor or a layered semiconductor such assilicon/silicon germanium, silicon-on-insulator or silicongermanium-on-insulator.

The isolation layer 103 may be formed of, for example, an insulatingmaterial such as silicon oxide, silicon nitride, silicon oxynitride,silicon nitride oxide, or fluoride-doped silicate. The isolation layer103 may define an active area 105 of the substrate 101. The active area105 may be extended along a direction S in a top-view perspective. Itshould be noted that, in the present disclosure, silicon oxynitriderefers to a substance which contains silicon, nitrogen, and oxygen andin which a proportion of oxygen is greater than that of nitrogen.Silicon nitride oxide refers to a substance which contains silicon,oxygen, and nitrogen and in which a proportion of nitrogen is greaterthan that of oxygen. In some embodiments, the active area 105 may beextended along a direction X in a top-view perspective.

FIG. 4 illustrates, in a schematic top-view diagram, an intermediatesemiconductor device in accordance with one embodiment of the presentdisclosure. FIGS. 5 to 14 are schematic cross-sectional view diagramstaken along the line A-A′ in FIG. 4 illustrating part of the flow forfabricating the semiconductor device 100A in accordance with oneembodiment of the present disclosure.

With reference to FIG. 1 and FIGS. 4 to 11, at step S13, a plurality ofword line structures 301 may be formed in the substrate 101.

With reference to FIGS. 4 and 5, a pad oxide layer 905, a pad nitridelayer 907, and a first mask layer 801 may be sequentially formed on thesubstrate 101. The pad oxide layer 905 may be formed, for example,silicon oxide. The pad nitride layer 907 may be formed of, for example,silicon nitride. The first mask layer 801 may include a plurality ofopenings 801WL. For convenience of description, only two adjacentopenings 801WL are described. In a top-view perspective, the twoopenings 801WL may respectively extended along a direction Y andparallel to each other. The direction Y may be slanted with respectiveto the direction S. The two openings 801WL may intersect with the activearea 105. The openings 801WL may define positions of the plurality ofword line structures 301 as will be fabricated later.

With reference to FIG. 6, a first etch process may be performed toremove portions of the pad oxide layer 905 and portions of the padnitride layer 907 and integrally form a plurality of first openings 909.The plurality of first openings 909 may be expanded from the openings801WL through the first etch process.

With reference to FIG. 7, a second etch process may be performed toremove portions of the substrate 101 and integrally form a plurality ofword line trenches 911. The plurality of word line trenches 911 may beexpanded from the plurality of first openings 909 through the secondetch process. For convenience of description, only one word line trench911 is described. After the second etch process, the first mask layer801 may be removed. In some embodiments, the first mask layer 801 may beremoved before the second etch process.

With reference to FIG. 8, a layer of first insulating material 913 maybe formed on the top surface of the pad nitride layer 907 and in theword line trench 911. In some embodiments, the first insulating material913 may be, for example, silicon oxide. In some embodiments, the firstinsulating material 913 may be, for example, a high-k dielectricmaterial such as metal oxide, metal nitride, metal silicate, transitionmetal-oxide, transition metal-nitride, transition metal-silicate,oxynitride of metal, metal aluminate, zirconium silicate, zirconiumaluminate, or a combination thereof. Specifically, the first insulatingmaterial 913 may be formed of hafnium oxide, hafnium silicon oxide,hafnium silicon oxynitride, hafnium tantalum oxide, hafnium titaniumoxide, hafnium zirconium oxide, hafnium lanthanum oxide, lanthanumoxide, zirconium oxide, titanium oxide, tantalum oxide, yttrium oxide,strontium titanium oxide, barium titanium oxide, barium zirconium oxide,lanthanum silicon oxide, aluminum silicon oxide, aluminum oxide, siliconnitride, silicon oxynitride, silicon nitride oxide, or a combinationthereof.

With reference to FIG. 9, a word line electrode 305 (for convenience ofdescription, only one word line electrode 305 is described) may beformed in the word line trench 911 and on the layer of first insulatingmaterial 913. The word line electrode 305 may be formed of, for example,a conductive material such as polysilicon, silicon germanium, metal,metal alloy, metal silicide, metal nitride, metal carbide, or acombination including multilayers thereof. The metal may be, forexample, aluminum, copper, tungsten, or cobalt. The metal silicide maybe, for example, nickel silicide, platinum silicide, titanium silicide,molybdenum silicide, cobalt silicide, tantalum silicide, tungstensilicide, or the like. In some embodiments, the word line electrode 305may be formed by depositing the conductive material in the word linetrench 911 and applying an etch back process to remove extra conductivematerial.

With reference to FIG. 10, a layer of second insulating material 915 maybe formed on the top surface of the layer of first insulating material913 and in the word line trench 911. The word line trench 911 may becompletely filled by the layer of second insulating material 915. Thesecond insulating material 915 may be formed of, for example, siliconoxide, a high-k dielectric material, or a combination thereof.

With reference to FIG. 11, a planarization process, such as chemicalmechanical polishing, may be performed until the top surface of thesubstrate 101 is exposed to provide a substantially flat surface forsubsequent processing steps. After the planarization process, the layerof first insulating material 913 may be turned into a word linedielectric layer 303 and the layer of second insulating material 915 maybe turned into a word line capping layer 307. Top surface of the wordline capping layer 307 may be substantially coplanar with the topsurface of the substrate 101. The word line dielectric layer 303 mayhave a thickness between about 10 angstroms and about 30 angstroms.

In some embodiments, the word line capping layer 307 may be a stackedlayer including a bottom capping layer formed of high-k dielectricmaterial and a top capping layer formed of silicon oxide. The topcapping layer formed of silicon oxide may reduce electric field at thetop surface of the substrate 101; therefore, leakage current may bereduced.

In some embodiments, a liner layer may be formed between the word linedielectric layer 303 and the word line electrode 305. The liner layermay be formed of, for example, titanium, titanium nitride, titaniumsilicon nitride, tantalum, tantalum nitride, tantalum silicon nitride,and combination thereof. The liner layer may be employed to prevent theword line electrode 305 from flaking or spalling from the word linedielectric layer 303.

The word line dielectric layer 303, the word line electrode 305, and theword line capping layer 307 together form the word line structure 301.

With reference to FIG. 1 and FIGS. 12 to 14, at step S15, a plurality ofimpurity regions 201B, 201C may be formed in the substrate 101.

With reference to FIG. 12, a first etch process may be performed toremove portions of the substrate 101, portions of the word linedielectric layer 303, and portions of the word line capping layer 307and integrally form a plurality of first recesses 901. For convenienceof description, only one first recess 901 is described. The first recess901 may have two tapering sidewalls opposing to each other. Horizontaldistances between the two tapering sidewalls may gradually decrease fromtop to bottom along the direction Z. An angle α between any one of thetapering sidewall and the main plane of the substrate 101 (i.e., the X-Yplane) may be between about 45 degree and about 60 degree. In someembodiments, the first etch process may be an isotropic plasma dry etchprocess. In some embodiments, the first etch process may be a wet etchprocess.

It should be noted that the selectivity of an etching process may begenerally expressed as a ratio of etching rates. For example, if onematerial is etched 25 times faster than other materials, the etchprocess may be described as having a selectivity of 25:1 or simply 25.In this regard, higher ratios or values indicate more selective etchingprocesses.

With reference to FIG. 13, a second etch process, such as an anisotropicplasma dry etch process, may be performed to remove portions of thesubstrate 101 and form a plurality of second recesses 903. In someembodiments, in the second etch process, an etching rate for thesubstrate 101 may be greater than an etching rate of the word linedielectric layer 303 and an etching rate of the word line capping layer307. The selectivity of the second etch process may be greater than orequal to about 10, greater than or equal to about 12, greater than orequal to about 15, greater than or equal to about 20, or greater than orequal to about 25.

For convenience of description, only one second recess 903 is described.The second recess 903 may be expanded from the bottom surface of thefirst recess 901. In some embodiments, the bottom surface of the secondrecess 903 may be curved. In some embodiments, the bottom surface of thesecond recess 903 may be flat. In some embodiments, the second recess903 may have an U-shaped cross-sectional profile. Corner effects may beavoided if the second recess 903 has an U-shape cross-sectional profile.A depth D1 of the first recess 901 may be equal to or less thanone-fourth of a depth D2 of the second recess 903. In other words, thedepth D1 of the first recess 901 may be equal to or less than one-fifthof a total depth D3 of sum of the first recess 901 and the second recess903.

With reference to FIG. 14, an epitaxial growth process may be performedto fill the plurality of first recesses 901 and the plurality of secondrecesses 903 and integrally form the plurality of impurity regions 201B,201C. The epitaxial growth process may be chemical vapor deposition,atomic layer deposition, or molecular beam epitaxy. In some embodiments,a process temperature of the epitaxial growth process may be betweenabout 700° C. and about 850° C. A process pressure of the epitaxialgrowth process may be between about 5 Torr to about 50 Torr. In someembodiments, a planarization process, such as chemical mechanicalpolishing, may be optionally performed to provide a substantially flatsurface for subsequent processing steps. In some embodiments, theplurality of impurity regions 201B, 201C may be formed protruding fromthe top surface of the substrate 101.

The shape (or structure) of the plurality of impurity regions 201B, 201Cmay be determined by the plurality of first recesses 901 and theplurality of second recesses 903. The impurity region 201B may belocated between the two word line structures 301. The impurity regions201C may be respectively correspondingly located opposite to theimpurity region 201B with the two word line structures 301 interposedtherebetween. The plurality of impurity regions 201B, 201C may includeupper portions 203 and lower portions 205. The upper portions 203 of theplurality of impurity regions 201B, 201C may be located at where theplurality of first recesses 901 previously was. The lower portions 205may be located at where the plurality of second recesses 903 previouslywas.

For convenience of description, only one upper portion 203 and one lowerportion 205 are described. The upper portion 203 may include twotapering sidewalls 203S. A horizontal distance between the two taperingsidewalls 203S (i.e., a width of the upper portion 203) may graduallydecrease from top to bottom along the direction Z. An angle α betweenany one of the tapering sidewall 203S and the top surface 203TS of theupper portion 203 may be between about 45 degree and about 60 degree. Inother words, the upper portion 203 may have a tapering cross-sectionalprofile. The upper portion 203 may have bottommost points 203Brespectively located at the intersections between the tapering sidewalls203S and the lower portion 205. A thickness T1 (i.e., a verticaldistance between the top surface 203TS of the upper portion 203 and thebottommost point 203B) of the upper portion 203 may be equal to or lessthan one-fourth of a thickness T2 (i.e., a vertical distance between thebottom surface 205BS of the lower portion 205 and the bottommost point203B) of the lower portion 205. In other words, the thickness T1 of theupper portion 203 may be equal to or less than one-fifth of a totalthickness T3 (i.e., a vertical distance between the top surface 203TS ofthe upper portion 203 and the bottom surface 205BS of the lower portion205) of the impurity region 203B/203C.

In some embodiments, the plurality of impurity regions 201B, 201C may beformed of, for example, silicon phosphide (SiP), phosphorus-dopedsilicon carbon (SiCP), silicon carbide (SiC), silicon germanium (SiGe),silicon-germanium-tin alloy (SiGeSn), silicon-germanium-boron alloy(SiGeB), or other suitable semiconductor material.

In some embodiments, the impurity region 201B/201C may be doped with adopant such as phosphorus or boron. The dopant concentration of theimpurity region 201B/201C may be uniform. In some embodiments, thedopant concentration of the impurity region 201B/201C may be graduallyincreased from bottom to top. In some embodiments, the dopantconcentration of the upper portion 203 may be greater than the dopantconcentration of the lower portion 205. In some embodiments, the dopantconcentration of the upper portion 203 may be gradually increased fromthe bottommost points 203B to the top surface 203TS. The greater dopantconcentration may reduce the resistance between the impurity region201B/201C and contacts or conductive lines which will later formedthereon.

In some embodiments, the top surface 305TS of the word line electrode305 may be at a vertical level lower than the vertical level of thebottommost points 203B. In some embodiments, the top surface 305TS ofthe word line electrode 305 and the bottommost points 203B may be at asame vertical level. In some embodiments, the word line dielectric layer303 may contact the lower portions 205 of the impurity regions201B/201C.

FIG. 15 illustrates, in a schematic top-view diagram, an intermediatesemiconductor device in accordance with one embodiment of the presentdisclosure. FIGS. 16 to 20 are schematic cross-sectional view diagramstaken along the line A-A′ in FIG. 15 illustrating part of the flow forfabricating the semiconductor device 100A in accordance with oneembodiment of the present disclosure.

With reference to FIG. 1 and FIGS. 15 to 17, at step S17, a firstconductive line 401 and two bottom contacts 501 may be formed on thesubstrate 101.

With reference to FIGS. 15 and 16, a layer of barrier material 917, alayer of first conductive material 919, a layer of mask material 921,and a second mask layer 803 may be sequentially formed on the substrate101. The barrier material 917 may be, for example, titanium, titaniumnitride, titanium silicon nitride, tantalum, tantalum nitride, tantalumsilicon nitride, and combination thereof. The first conductive material919 may be, for example, a conductive material such as dopedpolysilicon, metal, metal nitride, or metal silicide. The mask material921 may be, for example, silicon nitride.

The second mask layer 803 may include a line portion 803L and two circleportions 803C. In a top-view perspective, the line portion 803L may beline shape and may extend along the direction X. The direction X may beperpendicular to the direction Y and be slanted with respect to thedirection S. The line portion 803L may be formed intersecting theimpurity region 201B. The line portion 803L may define the position ofthe first conductive line 401 as will be fabricated later. In a top-viewperspective, the two circle portions 803C may be round shape and may berespectively correspondingly formed on the impurity regions 201G. Thetwo circle portions 803C may define positions of the two bottom contacts501 as will be fabricated later. For convenience of description, onlyone circle portion 803C is described.

With reference to FIG. 17, an etch process may be performed to removeportions of the layer of barrier material 917, the layer of firstconductive material 919, and the layer of mask material 921. After theetch process, the layer of barrier material 917 may be turned into afirst conductive line barrier layer 403 and two bottom contact barrierlayers 503. The layer of first conductive material 919 may be turnedinto a first conductive line 401 and two bottom contact conductivelayers 505. The layer of mask material 921 may be turned into a firstconductive line mask layer 407 and two bottom contact mask layers 507.In some embodiments, portions of the impurity regions 201B/201C may bealso removed by the etch process and a plurality of gaps 203G may beformed adjacent to the tapering sidewalls 203S.

The first conductive line barrier layer 403, the first conductive lineconductive layer 405, and the first conductive line mask layer 407together form the first conductive line 401. The bottom contact barrierlayers 503, the bottom contact conductive layers 505, and the bottomcontact mask layers 507 together form the bottom contact 501. The shapesand dimension of the second mask layer 803 may inherited by the firstconductive line 401 and the two bottom contacts 501.

In some embodiments, the first conductive line barrier layer 403 and thebottom contact barrier layer 503 may be stacked layer including a bottomlayer formed of titanium and a top layer formed of titanium nitride. Insome embodiments, the first conductive line conductive layer 405 and thebottom contact conductive layers 505 may be stacked layer including abottom layer formed of tungsten nitride and a top layer formed oftungsten.

With reference to FIGS. 1, 18, and 19, at step S19, first conductiveline spacers 409 may be formed on sidewalls of the first conductive line401 and bottom contact spacers 509 may be formed on sidewalls of the twobottom contacts 501.

With reference to FIG. 18, the second mask layer 803 may be removed. Aspacer layer 923 may be formed to cover the top surface of the substrate101, the first conductive line 401, and the two bottom contacts 501. Thespacer layer 923 may be formed of, for example, silicon nitride. Thespacer layer 923 may have a thickness thick enough to interrupt thespace filling procedure, which will be performed later, between thefirst conductive line 401 and the two bottom contacts 501. Specifically,the thickness of the spacer layer 923, specially the spacer layer 923attached on the sidewalls of the first conductive line 401 and sidewallsof the two bottom contacts 501, may compress the volumes of the spacesbetween the first conductive line 401 and the two bottom contacts 501.Therefore, a first insulating layer 107, which will be deposited later,may hardly fill the compressed spaces between the first conductive line401 and the two bottom contacts 501.

With reference to FIG. 19, an etch process, such as an anisotropic dryetch process, may be performed to remove portions of the spacer layer923 and integrally form the first conductive line spacers 409 and thebottom contact spacers 509. In some embodiments, the first conductiveline spacers 409 and the bottom contact spacers 509 may partially fillthe plurality of gaps 203G. In some embodiments, the first conductiveline spacers 409 and the bottom contact spacers 509 may completely fillthe plurality of gaps 203G. In some embodiments, a distance D4 (as shownin FIG. 21) between the first conductive line 401 and the bottom contact501 may be less than one-fourth of a line width L1 (as shown in FIG. 21)of the first conductive line 401. In some embodiments, a sum of athickness T4 (as shown in FIG. 21) of the first conductive line spacer409 and a thickness T5 (as shown in FIG. 21) of the bottom contactspacer 509 may be equal to or greater than one-half of a distance D5 (asshown in FIG. 21) between the first conductive line 401 and the bottomcontact 501.

With reference to FIGS. 1 and 20, at step S21, a plurality of air gaps927 may be formed between the first conductive line spacers 409 and thebottom contact spacers 509.

With reference to FIG. 20, a first insulating layer 107 may be formedover the intermediate semiconductor device in FIG. 19. The firstinsulating layer 107 may be silicon oxide, flowable oxide, undopedsilica glass, borosilica glass, phosphosilica glass, borophosphosilicaglass, fluoride silicate glass, carbon-doped silicon oxide, or acombination thereof. A planarization process, such as chemicalmechanical polishing, may be performed to provide a substantially flatsurface for subsequent processing steps. Due to the thick firstconductive line spacers 409 and the bottom contact spacers 509, thefirst insulating layer 107 may not completely fill the narrow spacesbetween the first conductive line 401 and the two bottom contacts 501.As a result, the plurality of air gaps 927 may be spontaneously formedbetween the first conductive line spacers 409 and the bottom contactspacers 509. A planarization process, such as chemical mechanicalpolishing, may be subsequently performed to provide a substantially flatsurface for subsequent processing steps.

FIG. 21 illustrates, in a schematic top-view diagram, an intermediatesemiconductor device in accordance with one embodiment of the presentdisclosure. FIGS. 22 to 24 are schematic cross-sectional view diagramstaken along the line A-A′ in FIG. 21 illustrating part of the flow forfabricating the semiconductor device 100A in accordance with oneembodiment of the present disclosure.

With reference to FIG. 1 and FIGS. 21 to 24, at step S23, two topcontacts 601 may be formed on the two bottom contacts 501.

With reference to FIGS. 21 and 22, a third mask layer 805 may be formedon the first insulating layer 107. The third mask layer 805 may includetwo openings 805C. In a top-view perspective, the two openings 805C mayhave a round shape or an oval shape. The two openings 805C may berespectively correspondingly formed on the two capacitor bottom contacts501. The two openings 805C may define positions of the top contacts 601as will be fabricated later.

With reference to FIG. 23, an etch process, such as an anisotropic dryetch process, may be performed to remove portions of the firstinsulating layer 107, and the bottom contact mask layers 507 andintegrally form second openings 925. The top surfaces of the two bottomcontact conductive layers 505 may be exposed through the second openings925. In some embodiments, the width W1 of the second opening 925 may beless than the width W2 of the bottom contact 501.

With reference to FIG. 24, the two top contacts 601 may be formed in thesecond openings 925. For convenience of description, only one topcontact 601 is described. In some embodiments, the top contact 601 maybe a single layer including a conductive material such as dopedpolysilicon, metal, metal nitride, or metal silicide. The capacitor topcontact 601 may be formed by depositing the conductive material into thesecond opening 925 and subsequently performing a planarization processto remove excess material and provide a substantially flat surface forsubsequent processing steps.

In some embodiments, the top contact 601 may include a first conductivelayer 603, a second conductive layer 605, and a third conductive layer607 sequentially formed in the second opening 925. The first conductivelayer 603 may be formed of, for example, doped polysilicon. The firstconductive layer 603 may be formed by performing a deposition processand a subsequent etch back process.

The second conductive layer 605 may be formed of, for example, titaniumsilicide, nickel silicide, nickel platinum silicide, tantalum silicide,or cobalt silicide. The second conductive layer 605 may have a thicknessbetween about 2 nm and about 20 nm. Firstly, a layer of conductivematerial may be formed filled the second opening 925. The conductivematerial may include, for example, titanium, nickel, platinum, tantalum,or cobalt. A thermal treatment may be subsequently performed. During thethermal treatment, metal atoms of the metal layer may react chemicallywith silicon atoms of first conductive layer 603 to form the secondconductive layer 605. The thermal treatment may be a dynamic surfaceannealing process. After the thermal treatment, a cleaning process maybe performed to remove the unreacted conductive material. The cleaningprocess may use etchant such as hydrogen peroxide and an SC-1 solution.

The third conductive layer 607 may be formed of, for example, metal ormetal nitride. The third conductive layer 607 may be formed byperforming a deposition process and a subsequent planarization processto remove excess material and provide a substantially flat surface forsubsequent processing steps.

FIG. 25 illustrates, in a schematic top-view diagram, an intermediatesemiconductor device in accordance with one embodiment of the presentdisclosure. FIG. 26 is schematic cross-sectional view diagram takenalong the line A-A′ in FIG. 25 illustrating part of the flow forfabricating the semiconductor device 100A in accordance with oneembodiment of the present disclosure.

With reference to FIGS. 1, 25, and 26, at step S25, two secondconductive lines 411 may be formed on the two top contacts 601.

With reference to FIGS. 25 and 26, a second insulating layer 109 may beformed on the first insulating layer 107. The second insulating layer109 may be formed of a same material as the first insulating layer 107but is not limited thereto. The two second conductive lines 411 may beformed in the second insulating layer 109 and on the two top contacts601 by, for example, a damascene process. In a top-view perspective, thesecond conductive line 411 may extend along a second direction differentfrom the first conductive line 401. For example, the second conductiveline 411 may extend along the direction Y perpendicular to the firstconductive line 401 extended along the direction X. The secondconductive line 411 may be formed of, for example, tungsten, aluminum,copper, nickel, or cobalt.

FIGS. 27 to 40 illustrate, in schematic cross-sectional diagrams,intermediate semiconductor devices in accordance with other embodimentsof the present disclosure.

With reference to FIG. 27, an intermediate semiconductor device asillustrated in FIG. 17 may be fabricated. The spacer layer 923 may beformed over the intermediate semiconductor device. A thickness of thespacer layer 923 may be thin enough to avoid any air gap formationduring subsequent deposition process. In the other hand, the thicknessof the spacer layer 923 may also thick enough to provide sufficientprotection for the first conductive line 401 and the two bottom contacts501 during subsequent semiconductor process.

With reference to FIG. 28, a layer of energy-removable material 929 maybe formed to cover the spacer layer 923 and completely fill the spacesbetween the spacer layer 923 attached on the sidewalls of the firstconductive line 401 and the spacer layer 923 attached on the sidewallsof the two bottom contacts 501. A planarization process, such aschemical mechanical polishing, may be performed until the top surface ofthe spacer layer 923 is exposed to provide a substantially flat surfacefor subsequent processing steps. A sealing layer 111 may be subsequentlyformed on the layer of energy-removable material 929.

The energy-removable material 929 may include a material such as athermal decomposable material, a photonic decomposable material, ane-beam decomposable material, or a combination thereof. For example, theenergy-removable material 929 may include a base material and adecomposable porogen material that is sacrificially removed uponexposure to an energy source. The base material may include amethylsilsesquioxane based material. The decomposable porogen materialmay include a porogen organic compound that provides porosity to thebase material of the energy-removable material.

With reference to FIG. 29, an energy treatment may be performed to theintermediate semiconductor device in FIG. 28 by applying the energysource thereto. The energy source may include heat, light, or acombination thereof. When heat is used as the energy source, atemperature of the energy treatment may be between about 800° C. andabout 900° C. When light is used as the energy source, an ultravioletlight may be applied. The energy treatment may remove the decomposableporogen material from the energy-removable material to generate emptyspaces (pores), with the base material remaining in place.

Alternatively, in some embodiments, the base material may be siliconoxide. The decomposable porogen material may include compounds includingunsaturated bonds such as double bonds or triple bonds. During theenergy treatment, the unsaturated bonds of the decomposable porogenmaterial may cross-link with silicon oxide of the base material. As aresult, the decomposable porogen material may shrink and generate emptyspaces, with the base material remaining in place. The empty spaces maybe filled with air so that a dielectric constant of the empty spaces maybe significantly low. In some embodiments, the base material may below-k dielectric materials.

In some embodiments, the energy-removable material 929 may include arelatively high concentration of the decomposable porogen material and arelatively low concentration of the base material, but is not limitedthereto. For example, the energy-removable material 929 may includeabout 75% or greater of the decomposable porogen material, and about 25%or less of the base material. In another example, the energy-removablematerial 929 may include about 95% or greater of the decomposableporogen material, and about 5% or less of the base material. In anotherexample, the energy-removable material 929 may include about 100% of thedecomposable porogen material, and no base material is used. In anotherexample, the energy-removable material 929 may include about 45% orgreater of the decomposable porogen material, and about 55% or less ofthe base material.

With reference to FIG. 29, after the energy treatment, the layer of theenergy-removable material 929 may turn into a porous insulating layer113. The base material may turn into a skeleton of the porous insulatinglayer 113 and the empty spaces may be distributed among the skeleton ofthe porous insulating layer 113. According to the composition of theenergy-removable material 929, the porous insulating layer 113 may havea porosity of 45%, 75%, 95%, or 100%. It should be noted that, when theporosity is 100%, it means the porous insulating layer 113 includes onlyan empty space and the porous insulating layer 113 may be regarded asair gaps.

With reference to FIG. 29, the sealing layer 111 may be formed of, forexample, a non-gap filling material such as silicon oxide formed usingtetraethoxysilane (TEOS), fluorine-doped silicon oxide formed usingfluorinated-TEOS, organic spin-on glass, or the like. The coverage layer111 may be formed by chemical vapor deposition, high density plasma,spin-on, or the like. In some embodiments, the energy treatment may beperformed before the formation of the sealing layer 111. In someembodiments, energy treatment may be performed after the formation ofthe second conductive lines 411.

With reference to FIG. 30, the semiconductor device 100B may beprovided. A third insulating layer 115 and a fourth insulating layer 117may be sequentially formed on the sealing layer 111. The thirdinsulating layer 115 and the fourth insulating layer 117 may be formedof a same material as the first insulating layer 107 but are not limitedthereto. The second conductive lines 411 and the two top contacts 601may be formed with a procedure similar to that illustrated in FIG. 26.

Alternatively, with reference to FIG. 31, in some embodiments, thesemiconductor device 100C may be provided. An intermediate semiconductordevice as illustrated in FIG. 13 may be fabricated and the plurality ofimpurity regions 201B, 201C may be formed in the plurality of firstrecesses 901 and the plurality of second recesses 903. The impurityregion 201B/201C may include an outer layer 207 and an inner layer 209.The outer layer 207 may be formed on the tapering sidewalls of the firstrecess 901 and the sidewalls and the bottom surface 205BS of the secondrecess 903. The outer layer 207 may have an U-shaped cross-sectionalprofile and may have a recessed portion. The inner layer 209 may beformed filling the recessed portion of the outer layer 207. The dopantconcentration of the outer layer 207 may be lower than the dopantconcentration of the inner layer 209. The rest elements may befabricated with a procedure similar to that illustrated in FIGS. 15 to26.

Alternatively, with reference to FIG. 32, in some embodiments, thesemiconductor device 100D may be provided. An intermediate semiconductordevice as illustrated in FIG. 18 may be fabricated. The first insulatinglayer 107 may be directly deposited over the spacer layer 923 and theplurality of air gaps 927 may be spontaneously formed between the spacerlayer 923 attached on the sidewalls of the first conductive line 401 andthe spacer layer 923 attached on the sidewalls of the two bottomcontacts 501. The rest elements may be fabricated with a proceduresimilar to that illustrated in FIGS. 20 to 26.

Alternatively, with reference to FIG. 33, in some embodiments, thesemiconductor device 100E may be provided. An intermediate semiconductordevice as illustrated in FIG. 27 may be fabricated. An etch process,such as an anisotropic dry etch process, may be performed before thedeposition of the layer of energy-removable material 929 to turn thespacer layer 923 into the first conductive line spacers 409 and thebottom contact spacers 509. The layer of energy-removable material 929(will be turned in to the porous insulating layer 113 later) may becompletely fill the spaces between the first conductive line spacers 409and the bottom contact spacers 509. The rest elements may be fabricatedwith a procedure similar to that illustrated in FIGS. 28 to 30.

Alternatively, with reference to FIG. 34, an intermediate semiconductordevice as illustrated in FIG. 27 may be fabricated. The layer ofenergy-removable material 929 may be formed to cover the spacer layer923 and not completely fill the space between the spacer layer 923attached on the sidewalls of the first conductive line 401 and thespacer layer 923 attached on the sidewalls of the two bottom contacts501.

With reference to FIG. 35, the first insulating layer 107 may be formedover the intermediate semiconductor device in FIG. 34 and completelyfill the spaces between the first conductive line 401 and the two bottomcontacts 501. In some embodiments, the thickness of the layer ofenergy-removable material 929 may be too thick; hence, the firstinsulating layer 107 may not completely fill the spaces between thefirst conductive line 401 and the two bottom contacts 501. Air gaps (notshown) may be spontaneously formed between the first conductive line 401and the two bottom contacts 501.

With reference to FIG. 36, a planarization process, such as chemicalmechanical polishing, may be performed until the top surface of thefirst conductive line 401 and the two bottom contacts 501 are exposed toprovide a substantially flat surface for subsequent processing steps,and separate the spacer layer 923 and the layer of energy-removablematerial 929 into multiple segments.

With reference to FIG. 37, the sealing layer 111 may be formed on thefirst insulating layer 107, the first conductive line 401, the firstconductive line spacers 409, the two bottom contacts 501, the bottomcontact spacers 509, the spacer layer 923, and the layer ofenergy-removable material 929. With reference to FIG. 38, thesemiconductor device 100F may be provided. The energy treatment may beperformed to the intermediate semiconductor device in FIG. 37 and turnedthe layer of energy-removable material 929 into the porous insulatinglayer 113. The porous insulating layer 113 may formed on the sidewallsof the spacer layer 923 attached on the sidewalls of the firstconductive line 401 and the sidewalls of the two bottom contacts 501.The rest elements may be fabricated with a procedure similar to thatillustrated in FIG. 30.

Alternatively, with reference to FIGS. 39 and 40, in some embodiments,the semiconductor device 100G may be provided. An intermediatesemiconductor device as illustrated in FIG. 27 may be fabricated. Anetch process, such as an anisotropic dry etch process, may be performedbefore the deposition of the layer of energy-removable material 929 toturn the spacer layer 923 into the first conductive line spacers 409 andthe bottom contact spacers 509. After the energy treatment, the porousinsulating layer 113 may be formed on sidewalls of the first conductiveline spacers 409 and sidewalls of the bottom contact spacers 509. Therest elements may be fabricated with a procedure similar to thatillustrated in FIG. 30.

One aspect of the present disclosure provides a semiconductor device.The semiconductor device comprises: a substrate; a first conductive linepositioned on the substrate and extend along a first direction; a firstconductive line spacer positioned on a sidewall of the first conductiveline; a bottom contact positioned adjacent to the first conductive line;a bottom contact spacer positioned on a sidewall of the bottom contact;and a porous insulating layer positioned between the first conductiveline spacer and the bottom contact spacer; wherein a porosity of theporous insulating layer is between about 25% and about 100%.

Another aspect of the present disclosure provides a method forfabricating a semiconductor device. The method comprising: providing asubstrate; integrally forming a first conductive line and a bottomcontact on the substrate; integrally forming a first conductive linespacer on a sidewall of the first conductive line and a bottom contactspacer on a sidewall of the bottom contact; and forming a porousinsulating layer between the first conductive line spacer and the bottomcontact spacer.

Due to the design of the semiconductor device of the present disclosure,the parasitic capacitance between conductive feature such as the firstconductive line 401 and the two bottom contacts 501 may be reduced bythe alleviation feature like the plurality of air gaps 927 or the porousinsulating layer 113. Therefore, the performance of the semiconductordevice may be improved. In addition, the upper portions 203 of theplurality of impurity regions 201B, 201C having tapering cross-sectionalprofile may provide an extra process tolerance for formation of contactthereon. Hence, the yield of fabrication of the semiconductor device maybe improved.

Although the present disclosure and its advantages have been describedin detail, it should be understood that various changes, substitutionsand alterations can be made herein without departing from the spirit andscope of the disclosure as defined by the appended claims. For example,many of the processes discussed above can be implemented in differentmethodologies and replaced by other processes, or a combination thereof.

Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present disclosure, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present disclosure. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, and steps.

What is claimed is:
 1. A method for fabricating a semiconductor device,comprising: providing a substrate; integrally forming a first conductiveline and a bottom contact on the substrate; integrally forming a firstconductive line spacer on a sidewall of the first conductive line and abottom contact spacer on a sidewall of the bottom contact; and forming aporous insulating layer between the first conductive line spacer and thebottom contact spacer.
 2. The method for fabricating the semiconductordevice of claim 1, further comprising a step of forming two impurityregions in the substrate and below the first conductive line and thebottom contact, wherein the two impurity regions are formed of siliconphosphide, phosphorus-doped silicon carbon, silicon carbide, silicongermanium, silicon-germanium-tin alloy, or silicon-germanium-boronalloy.
 3. The method for fabricating the semiconductor device of claim1, wherein a porosity of the porous insulating layer is between about25% and about 100%.
 4. The method for fabricating the semiconductordevice of claim 1, wherein a distance between the first conductive linespacer and the bottom contact spacer is less than one-fourth of a linewidth of the first conductive line.
 5. The method for fabricating thesemiconductor device of claim 1, wherein a sum of a thickness of thefirst conductive line spacer and a thickness of the bottom contactspacer is equal to or greater than one-half of a distance between thefirst conductive line and the bottom contact.
 6. The method forfabricating the semiconductor device of claim 5, further comprising aword line structure positioned between the two impurity regions.
 7. Themethod for fabricating the semiconductor device of claim 6, wherein eachof the two impurity regions comprises an upper portion positionedadjacent to the word line structure and a lower portion positioned belowthe upper portion and the upper portion has a tapering cross-sectionalprofile.
 8. The method for fabricating the semiconductor device of claim7, wherein the upper portion of each of the two impurity regionscomprises a top surface substantially coplanar with a top surface of thesubstrate and two tapering sidewalls connected to the top surface and anangle between one of the two tapering sidewalls and the top surface isbetween about 45 degree and about 60 degree.
 9. The semiconductor deviceof claim 7, wherein a thickness of the upper portion of each of the twoimpurity regions is equal to or less than one-fifth of a thickness ofeach of the two impurity regions.
 10. The semiconductor device of claim8, wherein the word line structure comprises a word line dielectriclayer contacting the lower portion of the impurity region, a word lineelectrode positioned on the word line dielectric layer, and a word linecapping layer positioned on the word line electrode.
 11. Thesemiconductor device of claim 9, wherein the word line dielectric layerhas a thickness between about 10 angstroms and about 30 angstroms. 12.The semiconductor device of claim 10, wherein the bottom contactcomprises a bottom contact barrier layer and a bottom contact conductivelayer positioned on the bottom contact barrier layer, the bottom contactspacer is positioned on a sidewall of the bottom contact barrier layerand a sidewall of the bottom contact conductive layer.
 13. Thesemiconductor device of claim 11, wherein the bottom contact barrierlayer is a stacked layer comprising a bottom layer formed of titaniumand a top layer formed of titanium nitride.
 14. The semiconductor deviceof claim 12, wherein the bottom contact conductive layer is a stackedlayer comprising a bottom layer formed of tungsten nitride and a toplayer formed of tungsten.
 15. The semiconductor device of claim 1,further comprising a second conductive line positioned above the bottomcontact and extend along a second direction different from the firstdirection.
 16. The semiconductor device of claim 14, further comprisinga top contact positioned between the bottom contact and the secondconductive line.
 17. The semiconductor device of claim 15, wherein thetop contact comprises a first conductive layer positioned on the bottomcontact, a second conductive layer positioned on the first conductivelayer, and a third conductive layer positioned on the second conductivelayer.
 18. The semiconductor device of claim 16, wherein the firstconductive layer is formed of doped polysilicon, the second conductivelayer is formed of metal silicide and has a thickness between about 2 nmand about 20 nm, and the third conductive layer is formed of metal ormetal nitride.
 19. The semiconductor device of claim 17, wherein theporous insulating layer is positioned on a sidewall of the firstconductive line spacer and a sidewall of the bottom contact spacer. 20.A method for fabricating a semiconductor device, comprising: providing asubstrate; integrally forming a first conductive line and a bottomcontact on the substrate; integrally forming a first conductive linespacer on a sidewall of the first conductive line and a bottom contactspacer on a sidewall of the bottom contact; forming a porous insulatinglayer between the first conductive line spacer and the bottom contactspacer.
 21. The method for fabricating the semiconductor device of claim19, further comprising a step of forming two impurity regions in thesubstrate and below the first conductive line and the bottom contact,wherein the two impurity regions are formed of silicon phosphide,phosphorus-doped silicon carbon, silicon carbide, silicon germanium,silicon-germanium-tin alloy, or silicon-germanium-boron alloy.